Beside all the benefits provided by the FRAM technology itself the new MB97R8110 comes with additional energy harvesting functionality. Therefore additional componnets needed to realize an application can be powered by the energy generated from the external field for the RFID communication.
In more detail with features FRAM provides, it is possible to build RFID tags with features that no EEPROM based RFID tag can offer. The high writing speed allows to build RFID tags with much higher capacities than with EEPROM. Since tags are usually mounted on moving objects, there is a pain barrier how long a write access can last. With FRAM it is possible to come very close to the theoretical maximum that the RFID wireless protocols offer.
Also it is possible to equip much faster moving targets with RFID by using FRAM based tags. With the high endurance, frequently used tags don’t have to be replaced regularly when the memory wears out. It is almost impossible to reach the endurance limit of an FRAM based tag.
Fujitsu's FRAM memory is available for HF (13.56MHz) and UHF (860MHz-960MHz) applications. The large-density memory is perfect for RFID use in factory-automation, maintenance, asset-management, and logistic-tracking applications.
Because data storage in the FRAM technology is not based on charges but on polarization of the ferroelectric film, it shows a better data stability in medical, pharmaceutical, biomedical, food and cosmetic industries than other non-volatile memory technologies.
And, because of its serial interface, the FRAM RFID can connect to a microcontroller, expanding radio frequency identification into the realm of embedded applications.