The Novocell Smartbit™ cell generates and confines the breakdown voltage entirely in the memory core allowing the unprogrammed cells to have the native reliability of the process while only the programmed cells see high voltage.
To ensure that a programmed cell has achieved hard breakdown, Smartbit™ applies the high voltage until it detects the current signature of hard breakdown. 100 percent programmability and data retention are virtually guaranteed.
Smartbit™ avoids the data retention issues associated with floating gate designs. Unlike polysilicon or laser fuses, it is possible to route over IP based upon Smartbit IP, thus consuming no additional chip area.
Flash Memory / Memory IP