The MR2A08A and MR2A16A are a 4,194,304-bit magnetoresistive random access memory (MRAM) device organized as 524,288 words of 8 bits and 262,144 words of 16 bits respectively. They offers SRAM compatible 35ns read/write timing with unlimited endurance. Data is always non-volatile for greater than 20 years. Data is automatically protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification. The MR2A08A/MR2A16A is the ideal memory solution for applications that must permanently store and retrieve critical data and programs quickly.
The MR2A08A is available in a small footprint 400-mil, 44-lead plastic small-outline TSOP type 2 package or an 8 mm x 8 mm, 48-pin ball grid array (BGA) package with 0.75 mm ball centers. The M2A16A is available in a small footprint 48-pin ball grid array (BGA) package and a 44-pin thin small outline package (TSOP Type 2). These packages are compatible with similar low-power SRAM products and other non-volatile RAM products.
The MR2A08A and MR2A16A provide highly reliable data storage over a wide range of temperatures. The product is offered with commercial temperature range (0 to +70 °C), industrial temperature range (-40 to +85 °C), and AEC-Q100 Grade 1 temperature range (-40 to +125 °C) options.
Everspin Technologies is the leading developer and manufacturer of magnetic RAM (MRAM), offering stand-alone and embedded MRAM products. Everspin’s MRAM is the industry’s fastest non-volatile memory and provides unlimited endurance, unmatched reliability, 10-year-plus data retention and parallel and serial interfaces. As the world's first volume MRAM supplier, Everspin has established an MRAM intellectual property portfolio of more than 600 active patents and applications, many of which are fundamental and essential for MRAM technologies. Everspin’s current MRAM portfolio addresses persistent SRAM applications across three major markets: data center and storage; energy and infrastructure; and automotive and transportation. Everspin is on track to commercialize its next-generation Spin-Torque MRAM (ST-MRAM) products in 2012, offering a new storage class memory solution for non-volatile buffers and caching applications as well as a new nanosecond-class, gigabyte-per-second non-volatile storage tier.