Fast, simple SPI interface with up to 40 MHz clock rate
2.7 to 3.6 Volt power supply range
Low current sleep mode
Industrial and Automotive temperatures
Available in 8-pin DFN Small Flag RoHS-compliant package.
Direct replacement for serial EEPROM, Flash, FeRAM
Industrial Grade and AEC-Q100 Grade 1 and Grade 3 options
Moisture Sensitivity MSL-3
The MR25H128A is a 128Kbit magnetoresistive random access memory (MRAM) device organized as 16,384 words of 8 bits. The MR25H128A offers serial EEPROM and serial Flash compatible read/write timing with no write delays and unlimited read/write endurance.
Unlike other serial memories, both reads and writes can occur randomly in memory with no delay between writes. The MR25H128A is the ideal memory solution for applications that must store and retrieve data and programs quickly using a small number of I/O pins.
The MR25H128A is available in a 5 mm x 6 mm 8-pin DFN Small Flag package compatible with serial EEPROM, Flash, and FeRAM products.
The MR25H128A provides highly reliable data storage over a wide range of temperatures. The product is offered with industrial (-40° to +85 °C) and AEC-Q100 Grade 1 (-40°C to +125 °C) and AEC-Q100 Grade 3 (-40° to +85 °C) operating temperature range options.
Everspin Technologies is the leading developer and manufacturer of magnetic RAM (MRAM), offering stand-alone and embedded MRAM products. Everspin’s MRAM is the industry’s fastest non-volatile memory and provides unlimited endurance, unmatched reliability, 10-year-plus data retention and parallel and serial interfaces. As the world's first volume MRAM supplier, Everspin has established an MRAM intellectual property portfolio of more than 600 active patents and applications, many of which are fundamental and essential for MRAM technologies. Everspin’s current MRAM portfolio addresses persistent SRAM applications across three major markets: data center and storage; energy and infrastructure; and automotive and transportation. Everspin is on track to commercialize its next-generation Spin-Torque MRAM (ST-MRAM) products in 2012, offering a new storage class memory solution for non-volatile buffers and caching applications as well as a new nanosecond-class, gigabyte-per-second non-volatile storage tier.